| PART |
Description |
Maker |
| CRF24010D |
10 W SiC RF Power MESFET Die
|
CREE[Cree, Inc]
|
| CRF-22010-001 CRF-22010-101 |
62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS
|
CREE POWER
|
| NEZ6472-15B NEZ5258-4BD NEZ4450-8BD NEZ4450-8B NEZ |
C-BAND POWER GAAS MESFET C波段功率GaAs MESFET
CAP 100UF 6V 20% TANT SMD-6032-28 TR-7
|
NEC, Corp.
NEC Corp.
NEC[NEC]
http://
|
| NE6500379A-T1 |
3W L / S-BAND POWER GaAs MESFET
3W L, S-BAND POWER GaAs MESFET 3W升，S波段功率GaAs MESFET
|
NEC Corp.
NEC, Corp.
|
| APT2X21DC60J |
ISOTOP? SiC Diode Power Module
ISOTOP垄莽 SiC Diode Power Module
|
Microsemi Corporation
|
| MGF1951A-01 MGF1951A 1951A |
Medium Power Microwave MESFET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| NE6500379 NE6500379A NE6500379A-T1 |
3W L, S-BAND POWER GaAs MESFET
|
NEC
|
| N501 |
ISO/IEC JTC 1/SIC 2/WG 3 7-bit and 8-bit codes and their extension SECRETARIAT : ELOT
的ISO / IEC裕廊1/SIC 2/WG 3 7位和8位代码和扩展秘书处：埃洛
|
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| NE9000 NE900000 NE900000G NE900075 NE900089A NE900 |
Ku-BAND MEDIUM POWER GaAs MESFET
|
NEC
|
| NEZ1011-3E |
X BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
NEC, Corp.
|
| NEZ6472-8DD NEZ5964-4DD |
C BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
Microsemi, Corp.
|
| NE1069L-4B |
1.6-2.3 GHz, 4 W, L,S-band power GaAs MESFET
|
NEC
|
